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| 2N3439CSM4R 2N3440CSM4R MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 5.59 0.13 (0.22 0.005) 0.25 0.03 (0.01 0.001) 1.40 0.15 (0.055 0.006) * Hermetic Ceramic 4 pin Surface Mount Package - LCC3 * High Voltage Small Signal Type * Full Screening Options Available 0.23 min. (0.009) 0.64 0.08 (0.025 0.003) 0.23 rad. (0.009) 3 2 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 4 1 * "R" Denotes Reverse Pinning 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) APPLICATIONS: The 2N3439CSM4 and 2N3440CSM4 are high voltage silicon epitaxial planar transistors mounted in the popular 4 pin ceramic surface mount hermetically sealed package. These products are specifically intended for use in High reliability systems and can be ordered with a full range of screening options from standard Militar y (equivalent to CECC Full Assessment Level) through all options up to full space flight level. 2N3439CSM4 2N3440CSM4 450V 350V 7V 1A 0.5A 0.5W 300V 250V 7V 1A 0.5A 0.5W LCC3 PACKAGE Underside View PAD 1 - Collector PAD 2 - Emitter PAD 3 - N/C PAD 4 - Base ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC IB Ptot Tstg Tj Semelab plc. Collector - Base Voltage (IE = 0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current. Base Current. Total Power Dissipation at Tamb = 25C with product mounted on a suitable PCB to provide a heat path. Storage Temperature. Maximum Junction Temperature. -65 to +200C +200C Prelim. 11/98 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk 2N3439CSM4R 2N3440CSM4R ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* ICEX* ICBO* ICEO* IEBO* VCE(sat)* VBE(sat)* hFE* Collector - Emitter Sustaining Voltage (IB = 0) Collector Cut-off Current (VBE = -1.5V) Collector - Base Cut-off Current (IE = 0) Collector - Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Base - Emitter Saturation Voltage DC Current Gain Test Conditions IC = 50mA 2N3439CSM4R 2N3440CSM4R 2N3439CSM4R 2N3440CSM4R VCB = 360V 2N3439CSM4R VCB = 250V 2N3440CSM4R VCE = 300V 2N3439CSM4R VCE = 200V 2N3440CSM4R VEB = 6V IB = 4mA IB = 4mA VCE = 10V VCE = 10V IC = 50mA IC = 20mA IC = 20mA Min. 350 250 Typ. Max. Unit V 500 500 20 20 20 50 20 0.5 1.3 40 -- 30 mA mA mA mA Collector - Emitter Saturation Voltage IC = 50mA V 2N3439CSM4R only * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT Cob hfe Transition Frequency Output Capacitance Small Signal Current Gain Test Conditions IC = 10mA VCB = 10V IC = 5mA VCE = 10V VCE = 10V f = 5MHz f = 10MHz f = 1kHz Min. 15 Typ. Max. Unit MHz 10 pF 25 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 |
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